2SC3583-T1B-A-marking-R35, Renesas

RF TRANS NPN 10V 9GHZ SOT23

The 2SC3583 is an NPN epitaxial silicon transistor designed for use inlow-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very widedynamic range and excellent linearity. This is achieved by direct nitridepassivated base surface process (DNP process) which is an NECproprietary new fabrication technique.

FEATURES

• NF 1.2 dB TYP. @f = 1.0 GHz

• Ga 13 dB TYP. @f = 1.0 GHz

hFEClassification

Class

R33/Q     Marking R33     hFE   50 to 100

R34/R     Marking R34     hFE   80 to 160

R35/S     Marking R35     hFE   125 to 250